Stacking, Strain, & Stiffness of 2D Transition Metal Dichalcogenides Quantified through Reciprocal Space
نویسندگان
چکیده
منابع مشابه
Topological insulating states in 2D transition metal dichalcogenides induced by defects and strain.
First-principles calculations and extensive analyses reveal that the H phase of two-dimensional (2D) transition metal dichalcogenides (TMDs) can be tuned to topological insulators by introducing square-octagon (4-8) defects and by applying equi-biaxial tensile strain simultaneously. The 2D structure composed of hexagonal rings with 4-8 defects, named sho-TMD, is dynamically and thermally stable...
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Manipulating spin polarization of electrons in nonmagnetic semiconductors by means of electric fields or optical fields is an essential theme of the conceptual nonmagnetic semiconductor-based spintronics. Here we experimentally demonstrate an electric method of detecting spin polarization in monolayer transition metal dichalcogenides (TMDs) generated by circularly polarized optical pumping. The...
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Two-dimensional transition metal dichalcogenides provide a unique platform to study excitons in confined structures. Recently, several important aspects of excitons in these materials have been investigated in detail. However, the formation process of excitons from free carriers has yet to be understood. Here we report time-resolved measurements on the exciton formation process in monolayer sam...
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ژورنال
عنوان ژورنال: Microscopy and Microanalysis
سال: 2018
ISSN: 1431-9276,1435-8115
DOI: 10.1017/s1431927618008413